Product Specification
| Outline Size |
2~12" |
Customize |
| Conductive Type |
N Type or P Type or Intrinsic |
Customize |
| Conductive Type |
50~300mm |
|
| Thickness |
250 ~600 μm |
Customize |
| Thickness Deviation |
±10μm |
|
| The thickness of the oxide layer |
50nm~1000nm |
Customize |
| Total Indicated Runout（TIR） |
< 3 μm |
|
| BOW |
≤15μm |
|
| TTV: |
≤15μm |
|
| roughness |
<0.5nm |
|
| Resistivity |
0.001-15000 (Ω·cm) |
Customize |
| Crystal Orientation |
〈100〉；〈110〉；〈111〉 |
|
| Grade |
IC级 |
|
| Surface Treatment: |
Lapping, Single Side Polishing, Double Side Polishing |
Customize |
Si Wafer/SOI Wafer/SiO2 Wafer
