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InSb Wafer

Product Numbers: 201374122246

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INTRODUCTION

产品简介

锑化铟为立方晶系闪锌矿型结构,晶格常数0.6478nm。密度5.775g/cm3。熔点525℃。为直接带隙半导体,室温禁带宽度0.18eV,本征载流子浓度1.1×1022/m3,本征电阻率6×10-4Ω·m,较纯晶体的电子和空穴迁移率为10和0.17m2/(V·s)。采用区域熔炼、直拉法制备。用于制作远红外光电探测器、霍耳器件和磁阻器件。

产品技术参数

单晶

InSb 备注
外形尺寸 2“ (50.8 ± 0.3mm) 客户要求
厚度 500 ± 25µm
掺杂 None Te Ge
导电类型 N N P
载流子浓度cm-3 1~5x1014 12x1015
位错密度cm-2 <2x102

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